(GaAs)m(GaP)n low dimensional short-period superlattice fabricated by atomic layer epitaxy

The fabrication of (GaAs)(m)(GaP)(n) low dimensional short-period superlattices (LD-SPSL) by using advanced atomic layer epitaxy (ALE) techniques is demonstrated. (GaAs)(m)(GaP)(n) SPSL were grown on V-grooved GaAs substrates by using the ALE growth mode switching technique, between anisotropic (for GaAs growth) and isotropic (for Gap growth) ALE. The lateral confined systems composed of well-defined (GaAs),(GaP), SPSL have been confirmed via transmission electron microscopy (TEM). The zone-folding effect has been observed in the (GaAs),(GaP), LD-SPSL via photoluminescence (PL) measurements. Also multi-quantum wire structures (MQWR) composed by (GaAs)(m)(GaAs0.8P0.2)(n) SPSL, which were strong-coupled (m = 20, n = 5) and weak-coupled (m = 20, It = 20) systems, were fabricated. The coupling and the lateral confinement effects have been clearly observed via PL and PL excitation measurements. (C) 1998 Elsevier Science B.V. All rights reserved.