Semiconducting nanocrystalline iron disilicide thin films prepared by pulsed-laser ablation

被引：56

作者：

Yoshitake, T

Yatabe, M

Itakura, M

Kuwano, N

Tomokiyo, Y

Nagayama, K

机构：

[1] Kyushu Univ, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan

[2] Kyushu Univ, Dept Aeronaut & Astronaut, Higashi Ku, Fukuoka 8128580, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 15期

关键词：

D O I：

10.1063/1.1617374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous iron silicide was reported to be semiconducting as well as beta-FeSi2, and it has received considerable attention from both the physical and engineering points of view. However, there have been few studies and its basic properties are still unknown. We could grow the semiconducting nanocrystalline iron disilicide thin films by pulsed-laser deposition using an FeSi2 target. They consist of crystallites with diameters ranging from 3 to 5 nm. The carrier density and the mobility at 300 K were 1.5x10(19) cm(-3) and 35 cm/V s, respectively. (C) 2003 American Institute of Physics.

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页码：3057 / 3059

页数：3

相关论文

共 11 条

[1] Electronic and related properties of crystalline semiconducting iron disilicide [J].

Filonov, AB ;

Migas, DB ;

Shaposhnikov, VL ;

Dorozhkin, NN ;

Petrov, GV ;

Borisenko, VE ;

Henrion, W ;

Lange, H .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :7708-7712

[2] A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 mu m [J].

Leong, D ;

Harry, M ;

Reeson, KJ ;

Homewood, KP .

NATURE, 1997, 387 (6634) :686-688

[3] Amorphous-iron disilicide: A promising semiconductor [J].

Milosavljevic, M ;

Shao, G ;

Bibic, N ;

McKinty, CN ;

Jeynes, C ;

Homewood, KP .

APPLIED PHYSICS LETTERS, 2001, 79 (10) :1438-1440

[4] Semiconducting iron silicide thin films on silicon (111) with large Hall mobility and low residual electron concentration [J].

Muret, P ;

Ali, I ;

Brunel, M .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (10) :1170-1179

[5] Improvement of 1.5 μm photoluminescence from reactive deposition epitaxy (RDE) grown β-FeSi2 balls in Si by high temperature annealing [J].

Suemasu, T ;

Iikura, Y ;

Fujii, T ;

Takakura, K ;

Hiroi, N ;

Hasegawa, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (6AB) :L620-L622

[6] Ferromagnetic iron silicide thin films prepared by pulsed-laser deposition [J].

Yoshitake, T ;

Nakagauchi, D ;

Nagayama, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (7B) :L849-L851

[7] Atomic force microscope study of carbon thin films prepared by pulsed laser deposition [J].

Yoshitake, T ;

Nishiyama, T ;

Aoki, H ;

Suizu, K ;

Takahashi, K ;

Nagayama, K .

APPLIED SURFACE SCIENCE, 1999, 141 (1-2) :129-137

[8] Elimination of droplets using a vane velocity filter for pulsed laser ablation of FeSi2 [J].

Yoshitake, T ;

Shiraishi, G ;

Nagayama, K .

APPLIED SURFACE SCIENCE, 2002, 197 :379-383

[9] Droplet-free thin films prepared by pulsed laser deposition using a vane velocity filter [J].

Yoshitake, T ;

Shiraishi, G ;

Nagayama, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (2A) :836-837

[10] Homoepitaxial growth of diamond single-phase thin films by pulsed laser ablation of graphite [J].

Yoshitake, T ;

Nishiyama, T ;

Nagayama, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (6A) :L573-L575