Comparison of Ionic Liquid and Ion-Gel Top-Gate MoS2 Field-Effect Transistors

被引：1
|
作者：
Oh, Guen Hyung
Kim, TaeWan [1 ]
机构：
[1] Jeonbuk Natl Univ, Dept Elect Engn, Jeonju 54896, South Korea
来源：
APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY | 2021年 / 30卷 / 05期
关键词：
MoS2; Top-gate; Field-effect transistor; Ionic liquid; Ion-gel; LAYER MOS2;
D O I：
10.5757/ASCT.2021.30.5.156
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polymer electrolytes and ionic liquids (ILs) have attracted significant interest in applications as gate dielectrics. In this study, we fabricated top-gated molybdenum disulfide (MoS2) thin-film transistors using IL and ion-gel (IG) gate dielectrics. Room-temperature Raman spectra measurements indicated a dominant peak spectral emission at 358 cm(-1) (E-2g(1)) and 406.44 cm(-1) (A(1g)) associated with bilayer MoS2 films. The fabricated thin-film field-effect transistors (FET) with IG gate dielectric exhibited band transport with a highest mobility of 0.5 cm(2)/V.s, and a poor I-ON/I-OFF ratio of similar to 10. By contrast, the FET with IL gate dielectric exhibited a 3400 % improvement in terms of the mobility (17.9 cm(2)/V.s), and a 1000 % improvement of the I-ON/I-OFF ratio (similar to 100).
引用
收藏
页码：156 / 158
页数：3
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