Fatigue-free behavior of highly oriented Bi3.25La0.75Ti3O12 thin films grown on Pt/Ti/SiO2/Si(100) by metalorganic solution decomposition

被引：136
作者：
Chon, U
Yi, GC [1 ]
Jang, HM
机构：
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
[2] Pohang Univ Sci & Technol, Natl Res Lab Ferroelect Phase Transit, Pohang 790784, South Korea
[3] Res Inst Ind Sci & Technol, Pohang, Kyungbuk, South Korea
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 05期
关键词：
D O I：
10.1063/1.1333686
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Fatigue-free and highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown on Pt/Ti/SiO2/Si(100) substrates using metalorganic solution decomposition. Films annealed above 500 degreesC were characterized by strong c-axis preferential growth with an in-plane alignment of grains. The BLT film capacitors with a Pt top electrode showed excellent ferroelectric properties. The remanent polarization (2P(r)) and the coercive field (E-c) were in the range of 26-28 muC/cm(2) and 50-75 kV/cm, respectively. More importantly, the BLT capacitors did not show any significant fatigue up to 3.5x10(10) read/write switching cycles at a frequency of 1 MHz. (C) 2001 American Institute of Physics.
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页码：658 / 660
页数：3
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