Self-Assembly of Supramolecular Fullerene Ribbons via Hydrogen-Bonding Interactions and Their Impact on Fullerene Electronic Interactions and Charge Carrier Mobility

被引:65
作者
Chu, Cheng-Che [1 ]
Raffy, Guillaume [1 ]
Ray, Debdas [1 ]
Del Guerzo, Andre [1 ]
Kauffmann, Brice [2 ]
Wantz, Guillaume [3 ]
Hirsch, Lionel [3 ]
Bassani, Dario M. [1 ]
机构
[1] Univ Bordeaux 1, Inst Mol Sci, CNRS, UMR 5255, F-33405 Talence, France
[2] Univ Bordeaux 2, Inst Europeen Chim & Biol, CNRS, UMR 3033, F-33607 Pessac, France
[3] Univ Bordeaux, Lab Integrat Mat Syst, CNRS, Inst Polytech Bordeaux,ENSCBP,UMR 5218, F-33607 Pessac, France
关键词
CRYSTAL-STRUCTURE; PHOTOELECTROCHEMICAL PROPERTIES; FLUORESCENCE-SPECTRA; PORPHYRIN; C-60; ORGANIZATION; POLARIZATION; COMPOSITES; ABSORPTION; MECHANISM;
D O I
10.1021/ja104750f
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The anisotropy of the electronic interactions between fullerenes in crystalline solids was examined using a confocal fluorescence microscope by probing the polarization of the fluorescence emission arising from fullerene excimer-like emitting states. Crystals of Can obtained by vacuum-sublimation or from chloroform solution exhibited no or little polarization (p = 0 or 0.11, respectively), as expected from the high symmetry of the C-60 fcc lattice or the low degree of anisotropy induced by included solvent molecules. The use of hydrogen-bonding to supramolecularly control interfullerene electronic interactions was explored using a fullerene derivative (1) combining a solubilizing 3,4-di-tert-butylbenzene group and a barbituric acid hydrogen-bonding (H-B) moiety. The crystal structure of 1 establishes the existence of fullerene H-B tapes along which interfullerene electronic interactions are expected to be large. In agreement with this, we observe very strong polarization of the fullerene excimer-like emission (p = 0.78), indicative of a high degree of anisotropy in the fullerene interactions. The charge-carrier mobility of 1 as determined from OFET devices was found to be lower than that of C-60 (1.2 x 10(-4) vs 1.2 x 10(-2) cm(2)/s V), which is rationalized on the basis of the reduced dimensionality of 1 as a wire-like semiconductor and variations in the morphology of the device active layer revealed by AFM measurments.
引用
收藏
页码:12717 / 12723
页数:7
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