Influence of ZnSe capping of CdSe layers in the growth mode of ZnCdMgSe/CdSe/ZnCdMgSe heterostructures

被引:2
作者
Dario Alfaro-Martinez, Adrian [1 ]
Hernandez-Calderon, Isaac [2 ]
Tamargo, Maria C. [3 ]
机构
[1] CINVESTAV, PhD NyN Program, Ave Inst Politecn Nacl 2508, Mexico City 07360, DF, Mexico
[2] CINVESTAV, Dept Phys, Ave Inst Politecn Nacl 2508, Mexico City 07360, DF, Mexico
[3] CUNY City Coll, Dept Chem, New York, NY 10031 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2016年 / 34卷 / 04期
关键词
MOLECULAR-BEAM EPITAXY; THIN QUANTUM-WELLS;
D O I
10.1116/1.4953350
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors present a photoluminescence study of the optical and structural properties of ZnSe/CdSe/ZnSe layers grown by atomic layer epitaxy, embedded within barriers of ZnCdMgSe lattice-matched to the InP (001) substrate. The authors show that a few ZnSe monolayers surrounding the CdSe layer inhibit quantum dot formation and induce the growth of quantum islands of CdSe. For the case of a 2 monolayers coverage of CdSe, quantum islands of 1 and 2 monolayers thickness were observed. These quantum islands (or quantum terraces) present intense luminescence even at room temperature. (C) 2016 American Vacuum Society.
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页数:3
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