Impact of surface morphology on the electrical properties of Al/Ti Ohmic contacts on Al-implanted 4H-SiC

被引：1

作者：

Frazzetto, A. ^{[1
]}

Roccaforte, F. ^{[1
]}

Giannazzo, F. ^{[1
]}

Lo Nigro, R. ^{[1
]}

Bongiorno, C. ^{[1
]}

Di Franco, S. ^{[1
]}

Weng, M. H. ^{[1
]}

Saggio, M. ^{[1
]}

Zanetti, E. ^{[1
]}

Raineri, V. ^{[1
]}

机构：

[1] Ist Microelettron & Microsistemi, CNR, Str 8,5 Zona Ind, I-95121 Catania, Italy

来源：

SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷

关键词：

Aluminum; implantation; morphology; ohmic contact; P-TYPE;

D O I：

10.4028/www.scientific.net/MSF.679-680.413

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports on the impact of the surface morphology on the properties of Ti/Al Ohmic contacts fabricated on AI-implanted 4H-SiC. In particular, the surface roughness of the Al-implanted regions after annealing at 1700 degrees C was strongly reduced by the using a protective carbon capping layer during annealing (the surface roughness decreased from 9.0 nm to 1.3 nm). In this way, also the morphology and the specific contact resistance of Ti/Al Ohmic contacts formed on the implanted regions could be improved. The electrical and morphological data were correlated with the structural properties of the reacted metal layer and of the metal/SiC interfacial region.

引用

页码：413 / +

页数：2

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