Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes

被引：21

作者：

Byeon, Kyeong-Jae ^{[1
]}

Hong, Eun-Ju ^{[1
]}

Park, Hyoungwon ^{[1
]}

Cho, Joong-Yeon ^{[1
]}

Lee, Seong-Hwan ^{[1
]}

Jhin, Junggeun ^{[2
]}

Baek, Jong Hyeob ^{[2
]}

Lee, Heon ^{[1
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

[2] Korea Photon Technol Inst, LED Device Team, Kwangjoo 500779, South Korea

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 07期

关键词：

Gallium nitride; Light-emitting diodes; Nanoimprint; Photonic crystal; Full wafer scale; PHOTONIC CRYSTALS; EXTRACTION EFFICIENCY; P-GAN; FABRICATION; SURFACE; ENHANCEMENT; PERFORMANCE; STAMP;

D O I：

10.1016/j.tsf.2010.10.039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A UV-imprinting process for a full wafer was developed to enhance the light extraction of GaN-based green light-emitting diodes (LEDs). A polyvinyl chloride flexible stamp was used in the imprinting process to compensate for the poor flatness of the LED wafer. Two-dimensional photonic crystal patterns with pitches ranging from 600 to 900 nm were formed on the p-GaN top cladding layer of a 2 inch diameter wafer using nanoimprint and reactive ion etching processes. As a result, the optical output power of the patterned LED device was increased by up to 44% at a driving current of 20 mA by suppressing the total internal reflection and enhancing the irregular scattering of photons at the patterned p-GaN surface. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2241 / 2246

页数：6

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