Highly Organized Epitaxy of Dirac Semimetallic PtTe2 Crystals with Extrahigh Conductivity and Visible Surface Plasmons at Edges

被引:65
作者
Fu, Lei [1 ,2 ]
Hu, Debo [5 ]
Mendes, Rafael G. [3 ,4 ]
Rummeli, Mark H. [3 ,4 ]
Dai, Qing [5 ]
Wu, Bin [2 ]
Liu, Yunqi [2 ]
机构
[1] Wuhan Univ, Coll Chem & Mol Sci, Wuhan 430072, Hubei, Peoples R China
[2] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Beijing 100190, Peoples R China
[3] Soochow Univ, Sch Energy Optoelect & Energy, Soochow Inst Energy & Mat Innovat SIEMIS, Suzhou 215006, Peoples R China
[4] Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Suzhou 215006, Peoples R China
[5] Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China
基金
中国国家自然科学基金;
关键词
Dirac semimetal; platinum telluride; van der Waals epitaxy; electrical conductivity; plasmons; DISSOCIATIVE ATTACHMENT; GRAPHENE PLASMONS; TRANSITION; NANOSHEETS; GROWTH; PTSE2; DICHALCOGENIDES; TEMPERATURE; DEVICES; MOS2;
D O I
10.1021/acsnano.8b04540
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Platinum telluride (PtTe2), a member of metallic noble-transition-metal dichalcogenides (MNTMDs), has emerged as an indispensable candidate for superconducting, magnetic, and other electronic phase engineering, as well as optic applications. Herein, we report the van der Waals epitaxy of high-crystalline few-layer PtTe2 crystals on inert mica. Density functional theory calculations are used to illustrate a type-II Dirac cone along the Gamma-A direction in the PtTe2 crystal. Impressively, the PtTe2 devices exhibit an extra-high electrical conductivity of 10(7) S m(-1), 1000 times higher than that of metallic 1T MoS2. Meanwhile, the magnetoresistance effect at low temperatures reaches 800% in a field of 9.0 T. Furthermore, near-field nanooptical properties are assessed on PtTe2. Considering the subwavelength effect, the plasmonic wavelength lambda(p) approximate to 200 nm of 1T PtTe2 is obtained and the carrier concentration calculated from lambda(p) is about 1.22 X 10(15) cm(-2), which is 100-fold higher than that of MoTe(2 )in the previous reports. Therefore, our work demonstrates the growth of MNTMDs and provides insights into the plasmonic properties of 2D metallic telluride compounds.
引用
收藏
页码:9405 / 9411
页数:7
相关论文
共 34 条
[1]  
Acerce M, 2015, NAT NANOTECHNOL, V10, P313, DOI [10.1038/nnano.2015.40, 10.1038/NNANO.2015.40]
[2]   Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage [J].
Bonaccorso, Francesco ;
Colombo, Luigi ;
Yu, Guihua ;
Stoller, Meryl ;
Tozzini, Valentina ;
Ferrari, Andrea C. ;
Ruoff, Rodney S. ;
Pellegrini, Vittorio .
SCIENCE, 2015, 347 (6217)
[3]   Optical nano-imaging of gate-tunable graphene plasmons [J].
Chen, Jianing ;
Badioli, Michela ;
Alonso-Gonzalez, Pablo ;
Thongrattanasiri, Sukosin ;
Huth, Florian ;
Osmond, Johann ;
Spasenovic, Marko ;
Centeno, Alba ;
Pesquera, Amaia ;
Godignon, Philippe ;
Zurutuza Elorza, Amaia ;
Camara, Nicolas ;
Javier Garcia de Abajo, F. ;
Hillenbrand, Rainer ;
Koppens, Frank H. L. .
NATURE, 2012, 487 (7405) :77-81
[4]   A Simple Method for Synthesis of High-Quality Millimeter-Scale 1T Transition-Metal Telluride and Near-Field Nanooptical Properties [J].
Chen, Kun ;
Chen, Zefeng ;
Wan, Xi ;
Zheng, Zebo ;
Xie, Fangyan ;
Chen, Wenjun ;
Gui, Xuchun ;
Chen, Huanjun ;
Xie, Weiguang ;
Xu, Jianbin .
ADVANCED MATERIALS, 2017, 29 (38)
[5]   Phase patterning for ohmic homojunction contact in MoTe2 [J].
Cho, Suyeon ;
Kim, Sera ;
Kim, Jung Ho ;
Zhao, Jiong ;
Seok, Jinbong ;
Keum, Dong Hoon ;
Baik, Jaeyoon ;
Choe, Duk-Hyun ;
Chang, K. J. ;
Suenaga, Kazu ;
Kim, Sung Wng ;
Lee, Young Hee ;
Yang, Heejun .
SCIENCE, 2015, 349 (6248) :625-628
[6]   THE LATTICE DYNAMICS OF AN ANHARMONIC CRYSTAL [J].
COWLEY, RA .
ADVANCES IN PHYSICS, 1963, 12 (48) :421-480
[7]  
Duan XD, 2014, NAT NANOTECHNOL, V9, P1024, DOI [10.1038/nnano.2014.222, 10.1038/NNANO.2014.222]
[8]   Gate-tuning of graphene plasmons revealed by infrared nano-imaging [J].
Fei, Z. ;
Rodin, A. S. ;
Andreev, G. O. ;
Bao, W. ;
McLeod, A. S. ;
Wagner, M. ;
Zhang, L. M. ;
Zhao, Z. ;
Thiemens, M. ;
Dominguez, G. ;
Fogler, M. M. ;
Castro Neto, A. H. ;
Lau, C. N. ;
Keilmann, F. ;
Basov, D. N. .
NATURE, 2012, 487 (7405) :82-85
[9]   Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near-Infrared Phototransistors [J].
Fu, Lei ;
Wang, Feng ;
Wu, Bin ;
Wu, Nian ;
Huang, Wei ;
Wang, Hanlin ;
Jin, Chuanhong ;
Zhuang, Lin ;
He, Jun ;
Fu, Lei ;
Liu, Yunqi .
ADVANCED MATERIALS, 2017, 29 (32)
[10]   Peculiar localized state at zigzag graphite edge [J].
Fujita, M ;
Wakabayashi, K ;
Nakada, K ;
Kusakabe, K .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1996, 65 (07) :1920-1923