Luminescence properties of Zn2SiO4:Mn2+ thin-films by a sol-gel process

被引：110

作者：

Selomulya, R ^{[1
]}

Ski, S ^{[1
]}

Pita, K ^{[1
]}

Kam, CH ^{[1
]}

Zhang, QY ^{[1
]}

Buddhudu, S ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Microelect Div, Photon Res Ctr, Singapore 639798, Singapore

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 100卷 / 02期

关键词：

Mn2+-doped zinc silicate; thin films; sol-gel chemistry; luminescence;

D O I：

10.1016/S0921-5107(03)00084-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin film of Zn2SiO4:Mn2+ has been deposited on SiO2 buffered Si (SiO2/Si) wafers by the sol-gel process by means of a spin coating. Structural details of these films have been examined with X-ray diffraction (XRD) profiles and found to be rhombohedral structures. AFM images of the films have revealed that the structure has nano-meter size particles of about 130-160 mn in diameter and surface roughness RMS of 15 nm. FTIR profiles of these films have confirmed that OH content decreases with increasing annealing temperature and thereby enhancing the emission intensity. The OH content has disappeared when the films were annealed at 900 degreesC and above. Thin films of Zn2SiO4 containing a 5 mol% Mn2+ annealed at 1000 degreesC for about 10 min have shown a bright green luminescent color at 525 mn [T-4(1)((4)G) --> (6)A(1)(S-6) transition]. Luminescence spectra beyond 5 mol% of Mn2+ :Zn2SiO4 have shown a decreasing trend in their green emission behavior due to a cross-relaxation process. A double exponential fitting analysis has been employed to obtain the lifetime of this green emission, the average lifetime was found to be 8.233 ins. Such an encouraging luminescence performance from these thin films strengthens our proposal in developing them as flat panel luminescent systems. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：136 / 141

页数：6

共 22 条

[11] ONO YA, 1995, EL DISPLAYS
[12] Electroluminescence of the oxide thin film phosphors Zn2SiO4 and Y2SiO5
Ouyang, X
Kitai, AH
Xiao, T
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (06) : 3229 - 3234
[13] PITA K, 2001, 4 PAC RIM C LAS EL C, P1103
[14] A DIFFUSION-MODEL FOR ELECTRON-HOLE RECOMBINATION IN ZN2SIO4 - (MN,AS) PHOSPHORS
ROBBINS, DJ
CASWELL, NS
AVOURIS, P
GIESS, EA
CHANG, IF
DOVE, DB
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2784 - 2793
[15] Evidence for exchange-induced luminescence in Zn2SiO4:Mn
Ronda, CR
Amrein, T
[J]. JOURNAL OF LUMINESCENCE, 1996, 69 (5-6) : 245 - 248
[16] Shionoya S., 1999, PHOSPHOR HDB
[17] Photoluminescence behavior of manganese-doped zinc silicate phosphors
Sohn, KS
Cho, B
Park, HD
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1999, 82 (10) : 2779 - 2784
[18] Pulsed laser deposition of silicate phosphor thin films
Sun, XW
Kwok, HS
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (Suppl 1): : S39 - S43
[19] WEAST RC, 1983, HDB CHEM PHYSICS
[20] YOCOM N, 1996, J SOC INFORMATION DI, V4, P169

← 1 2 3 →