Luminescence properties of Zn2SiO4:Mn2+ thin-films by a sol-gel process

被引：110

作者：

Selomulya, R ^{[1
]}

Ski, S ^{[1
]}

Pita, K ^{[1
]}

Kam, CH ^{[1
]}

Zhang, QY ^{[1
]}

Buddhudu, S ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Microelect Div, Photon Res Ctr, Singapore 639798, Singapore

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 100卷 / 02期

关键词：

Mn2+-doped zinc silicate; thin films; sol-gel chemistry; luminescence;

D O I：

10.1016/S0921-5107(03)00084-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin film of Zn2SiO4:Mn2+ has been deposited on SiO2 buffered Si (SiO2/Si) wafers by the sol-gel process by means of a spin coating. Structural details of these films have been examined with X-ray diffraction (XRD) profiles and found to be rhombohedral structures. AFM images of the films have revealed that the structure has nano-meter size particles of about 130-160 mn in diameter and surface roughness RMS of 15 nm. FTIR profiles of these films have confirmed that OH content decreases with increasing annealing temperature and thereby enhancing the emission intensity. The OH content has disappeared when the films were annealed at 900 degreesC and above. Thin films of Zn2SiO4 containing a 5 mol% Mn2+ annealed at 1000 degreesC for about 10 min have shown a bright green luminescent color at 525 mn [T-4(1)((4)G) --> (6)A(1)(S-6) transition]. Luminescence spectra beyond 5 mol% of Mn2+ :Zn2SiO4 have shown a decreasing trend in their green emission behavior due to a cross-relaxation process. A double exponential fitting analysis has been employed to obtain the lifetime of this green emission, the average lifetime was found to be 8.233 ins. Such an encouraging luminescence performance from these thin films strengthens our proposal in developing them as flat panel luminescent systems. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：136 / 141

页数：6

共 22 条

[1] Blasse G., 1994, LUMINESCENT MAT, DOI [10.1007/978-3-642-79017-1_1, DOI 10.1007/978-3-642-79017-1_1]
[2] Chang H, 1999, J KOREAN PHYS SOC, V34, P545
[3] Improved luminescence properties of pulsed laser deposited Eu:Y2O3 thin films on diamond coated silicon substrates
Cho, KG
Kumar, D
Lee, DG
Jones, SL
Holloway, PH
Singh, RK
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (23) : 3335 - 3337
[4] Deposition of (Zn,Mn)2SiO4 for plasma display panels using charged liquid cluster beam
Cich, M
Kim, K
Choi, H
Hwang, ST
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (15) : 2116 - 2118
[5] GAN F, 1992, OPTICAL SPECTROSCOPI
[6] Henderson B., 1989, OPTICAL SPECTROSCOPY
[7] Physical properties of Y2O3:Eu luminescent films grown by MOCVD and laser ablation
Hirata, GA
McKittrick, J
AvalosBorja, M
Siqueiros, JM
Devlin, D
[J]. APPLIED SURFACE SCIENCE, 1997, 113 : 509 - 514
[8] LIN CC, 1994, J NONCRYST SOLIDS, V281, P171
[9] Sol-gel deposition and characterization of Mn2+-doped silicate phosphor films
Lin, J
Sänger, DU
Mennig, M
Bärner, K
[J]. THIN SOLID FILMS, 2000, 360 (1-2) : 39 - 45
[10] MINAMI T, 1998, J SID, V6

← 1 2 3 →