Phosphorus-diffused silicon solar cell emitters with plasma enhanced chemical vapor deposited silicon carbide

被引:13
作者
Orpella, A [1 ]
Vetter, M [1 ]
Ferré, R [1 ]
Martín, I [1 ]
Puigdollers, J [1 ]
Voz, C [1 ]
Alcubilla, R [1 ]
机构
[1] Univ Politecn Cataluna, Dept Elect Engn, ES-08034 Barcelona, Spain
关键词
amorphous silicon carbide (a-SIC : H(n)); solar cells; emitter saturation current density; passivation;
D O I
10.1016/j.solmat.2004.08.021
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We propose the use of annealed phosphorus doped amorphous silicon carbide layers (a-SiC:H(n)) deposited by PECVD as emitters in solar cells and explore the effect of the annealing time on the emitter saturation current density (J(OC)). We use the quasy-steady state photoconductance method to determine the dependence of effective lifetime on excess carrier density and from these measurements we obtain J(OC) values in the range of 300 fA cm(-2) for sheet resistances around 100 Omega/sq. Finally, we obtain effective surface recombination velocity values around 10(4) cm s(-1) by fitting the measured J(OC) values with PC1D simulated ones. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:667 / 674
页数:8
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