Phosphorus-diffused silicon solar cell emitters with plasma enhanced chemical vapor deposited silicon carbide

被引：13

作者：

Orpella, A ^{[1
]}

Vetter, M ^{[1
]}

Ferré, R ^{[1
]}

Martín, I ^{[1
]}

Puigdollers, J ^{[1
]}

Voz, C ^{[1
]}

Alcubilla, R ^{[1
]}

机构：

[1] Univ Politecn Cataluna, Dept Elect Engn, ES-08034 Barcelona, Spain

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2005年 / 87卷 / 1-4期

关键词：

amorphous silicon carbide (a-SIC : H(n)); solar cells; emitter saturation current density; passivation;

D O I：

10.1016/j.solmat.2004.08.021

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We propose the use of annealed phosphorus doped amorphous silicon carbide layers (a-SiC:H(n)) deposited by PECVD as emitters in solar cells and explore the effect of the annealing time on the emitter saturation current density (J(OC)). We use the quasy-steady state photoconductance method to determine the dependence of effective lifetime on excess carrier density and from these measurements we obtain J(OC) values in the range of 300 fA cm(-2) for sheet resistances around 100 Omega/sq. Finally, we obtain effective surface recombination velocity values around 10(4) cm s(-1) by fitting the measured J(OC) values with PC1D simulated ones. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：667 / 674

页数：8

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