Review of displacement damage effects in silicon devices

被引:499
作者
Srour, JR [1 ]
Marshall, CJ
Marshall, PW
机构
[1] Northrop Grumman Space Technol, Redondo Beach, CA 90278 USA
[2] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA
关键词
anneating; damage correlation; defects; displacement damage; nonionizing energy loss; radiation effects; semiconductors silicon; silicon devices;
D O I
10.1109/TNS.2003.813197
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach employed is to present information qualitatively while leaving quantitative details to the cited references. A bibliography of key displacement-damage information sources is also provided.
引用
收藏
页码:653 / 670
页数:18
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