Origin of lattice compression of FeSe1-xTex thin films on CaF2 substrates

被引：10

作者：

Tsukada, I. ^{[1
]}

Ichinose, A. ^{[1
]}

Nabeshima, F. ^{[2
]}

Imai, Y. ^{[2
]}

Maeda, A. ^{[2
]}

机构：

[1] Cent Res Inst Elect Power Ind, 2-6-1 Nagasaka, Yokosuka, Kanagawa 2400196, Japan

[2] Univ Tokyo, Dept Basic Sci, Meguro Ku, 3-8-1 Komaba, Tokyo 1538902, Japan

来源：

AIP ADVANCES | 2016年 / 6卷 / 09期

基金：

日本科学技术振兴机构;

关键词：

LAYER FESE FILMS; SUPERCONDUCTIVITY; TEMPERATURE;

D O I：

10.1063/1.4963646

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Microstructure of FeSe1-xTex thin films near the interface to CaF2 is investigated by means of transmission electron microscopy (TEM) and energy-dispersive X-ray analysis (EDX). TEM observation at the initial crystal-growth stage reveals that marked lattice compression occurs along the in-plane direction in the films with Se-rich composition, while the a-axis length of FeTe remains as its original value of bulk crystal. Subsequent EDX analysis demonstrates substantial diffusion of Se into the CaF2 substrate. Such diffusion is not prominent for Te. Thus, the formation of Se-deficient layer at the initial growth stage on CaF2 is concluded to be the main reason of the lattice compression in FeSe1-xTex thin films. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license

引用

页数：7

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