Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement

被引：63

作者：

Tan, C. S. ^{[1
,2
]}

Lim, D. F. ^{[1
]}

Ang, X. F. ^{[3
]}

Wei, J. ^{[3
]}

Leong, K. C. ^{[4
]}

机构：

[1] Nanyang Technol Univ, Singapore 639798, Singapore

[2] CINTRA CNRS NTU THALES, UMI 3288, Singapore 637553, Singapore

[3] Singapore Inst Mfg Technol, Singapore 638075, Singapore

[4] GlobalFoundries Singapore, Singapore 738406, Singapore

来源：

MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 02期

关键词：

OXYGEN-CONTENT; COPPER; PROTECTION; DIFFUSION;

D O I：

10.1016/j.microrel.2011.04.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-assembled monolayer (SAM) of alkane-thiol is formed on copper (Cu) thin layer coated on silicon (Si) wafer with the aim to protect the surface against excessive oxidation during storage in the room ambient. After 3 days of storage, the temporary SAM layer is desorbed with in situ anneal in inert ambient to uncover the clean Cu surface. A pair of wafers is bonded at 250 degrees C. Clear evidences of in-plane and out-of-plane Cu grain growth are observed resulting in a wiggling bonding interface. This gives rise to enhancement in shear strength in the bonded Cu-Cu layer. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：321 / 324

页数：4

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