Structural and optical properties of Nb-doped β-Ga2O3 thin films deposited by RF magnetron sputtering

被引：64
作者：
Zhang, Hao [1 ]
Deng, Jinxiang [1 ]
Pan, Zhiwei [1 ]
Bai, Zhiying [1 ]
Kong, Le [1 ]
Wang, Jiyou [1 ]
机构：
[1] Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
来源：
VACUUM | 2017年 / 146卷
基金：
中国博士后科学基金;
关键词：
Nb-doped beta-Ga2O3 films; RF magnetron sputtering; Crystal structure; Optical properties; GA2O3; GROWTH;
D O I：
10.1016/j.vacuum.2017.09.033
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The intrinsic and Nb-doped beta-Ga2O3 (beta-Ga2O3:Nb) thin films have been deposited on the Si and quartz substrates by radio frequency magnetron technique in argon ambient. The effects of Nb doping on the structural and optical properties of Ga2O3:Nb thin films have been investigated. After Nb-doping, the crystal lattice, surface morphology, optical transmittance and optical energy gap of the beta-Ga2O3 films are greatly changed. The crystal lattice of the beta-Ga2O3:Nb films is augmented, the energy gap shrinks and the crystalline quality is improved. XPS spectra shows that niobium is incorporated into the oxide matrix and present in the (beta-Ga2O3 as Nb(IV). (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：93 / 96
页数：4
相关论文
共 18 条
[1]   A model of the NbOx≈1 nanocrystals tiling a Nb(110) surface annealed in UHV [J].
Arfaoui, I ;
Cousty, J ;
Guillot, C .
SURFACE SCIENCE, 2004, 557 (1-3) :119-128
[2]   Research on the structural and optical stability of Ga2O3 films deposited by electron beam evaporation [J].
Cheng, Yi ;
Yang, Kun ;
Peng, Yong ;
Yin, Yan ;
Chen, Jixiang ;
Jing, Bo ;
Liang, Hongwei ;
Du, Guotong .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (12) :5122-5126
[3]   Incorporation of Nb(V) into BEA zeolite investigated by XRD, NMR, IR, DR UV-vis, and XPS [J].
Dzwigaj, Stanislaw ;
Millot, Yannick ;
Methivier, Christophe ;
Che, Michel .
MICROPOROUS AND MESOPOROUS MATERIALS, 2010, 130 (1-3) :162-166
[4]   Mg-doped β-Ga2O3 films with tunable optical band gap prepared on MgO (110) substrates by metal-organic chemical vapor deposition [J].
Feng, Xianjin ;
Li, Zhao ;
Mi, Wei ;
Luo, Yi ;
Ma, Jin .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 34 :52-57
[5]   Growth characteristics and device properties of MOD derived β-Ga2O3 films [J].
Guo, Pei ;
Xiong, Jie ;
Zhao, Xiaohui ;
Sheng, Tuo ;
Yue, Chao ;
Tao, Bowan ;
Liu, Xingzhao .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2014, 25 (08) :3629-3632
[6]   Dielectric characterization of transparent epitaxial Ga2O3 thin film on n-GaN/Al2O3 prepared by pulsed laser deposition [J].
Lee, Sang-A ;
Hwang, Jae-Yeol ;
Kim, Jong-Pil ;
Jeong, Se-Young ;
Cho, Chae-Ryong .
APPLIED PHYSICS LETTERS, 2006, 89 (18)
[7]   Structural, optical and photoluminescence properties of Pr-doped β-Ga2O3 thin films [J].
Li, Wenhao ;
Peng, Yangke ;
Wang, Chong ;
Zhao, Xiaolong ;
Zhi, Yusong ;
Yan, Hui ;
Li, Linghong ;
Li, Peigang ;
Yang, Hujiang ;
Wu, Zhenping ;
Tang, Weihua .
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 697 :388-391
[8]   Characterization of Sn-doped β-Ga2O3 films deposited on MgO (100) substrate by MOCVD [J].
Mi, Wei ;
Ma, Jin ;
Li, Zhao ;
Luan, Caina ;
Xiao, Hongdi .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (10) :7889-7894
[9]   Electrical and optical characterizations of β-Ga2O3: Sn films deposited on MgO(110) substrate by MOCVD [J].
Mi, Wei ;
Du, Xuejian ;
Luan, Caina ;
Xiao, Hongdi ;
Ma, Jin .
RSC ADVANCES, 2014, 4 (58) :30579-30583
[10]   Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate [J].
Nakagomi, Shinji ;
Kokubun, Yoshihiro .
JOURNAL OF CRYSTAL GROWTH, 2012, 349 (01) :12-18
12