Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography

被引：30

作者：

Cooper, David ^{[1
]}

Rouviere, Jean-Luc ^{[2
]}

Beche, Armand ^{[3
]}

Kadkhodazadeh, Shima ^{[4
]}

Semenova, Elizaveta S. ^{[5
]}

Yvind, Kresten ^{[5
]}

Dunin-Borkowski, Rafal ^{[6
,7
]}

机构：

[1] CEA, LETI, F-38054 Grenoble, France

[2] CEA, INAC, F-38054 Grenoble, France

[3] FEI France, F-38054 Grenoble, France

[4] Tech Univ Denmark, Ctr Electron Nanoscopy, DK-2800 Lyngby, Denmark

[5] Tech Univ Denmark, Dept Photon Engn, DK-2800 Lyngby, Denmark

[6] Res Ctr Julich, Ernst Ruska Ctr Microscopy & Spect Electrons ER C, D-52425 Julich, Germany

[7] Res Ctr Julich, PGI, D-52425 Julich, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 26期

关键词：

Optical properties - III-V semiconductors - Image resolution - Scanning electron microscopy - High resolution transmission electron microscopy - Semiconducting indium phosphide - Indium arsenide - Indium phosphide - Nanocrystals;

D O I：

10.1063/1.3672194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAs quantum dots grown in InP with a spatial resolution of 1 nm. A strain value of 5.4% +/- 0.1% has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations. (C) 2011 American Institute of Physics. [doi:10.1063/1.3672194]

引用

页数：3

共 14 条

[1] Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy [J].