High-performance Self-powered Perovskite Photodetector Based On Cesium Iodide Doped Spiro-OMeTAD Hole Transport Material

被引:13
作者
Li, Guoxin [1 ]
Wang, Yukun [1 ]
Huang, Lixiang [1 ]
Sun, Wenhong [1 ,2 ]
机构
[1] Guangxi Univ, Res Ctr Optoelect Mat & Devices, Sch Phys Sci & Technol, Nanning 530004, Peoples R China
[2] Guangxi Key Lab Proc Nonferrous Metall & Featured, Nanning 530004, Peoples R China
关键词
Perovskites; Photodetectors; CsI; Hole transfer material; Spiro-OMeTAD; SOLAR-CELLS; 4-TERT-BUTYLPYRIDINE; DETECTORS; FILMS;
D O I
10.1016/j.jallcom.2022.164432
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Hole transport materials play an essential role in the performance of perovskite detectors (PDs). Therefore, hole transport materials with excellent performance can significantly promote photoinduced holes' extraction rate and mobility. Spiro-OMeTAD, a small organic molecular material, has high solubility and excellent film-forming properties and is ideal for the hole transport layer (HTL) of photodetectors. In this work, a small amount of CsI is introduced into Spiro-OMeTAD together with Li-TFSI and TBP as additives. It is found that CsI and TBP formed a complex, which inhibited the agglomeration of Li-TFSI in Spiro-OMeTAD, thus preventing the rapid evaporation of TBP from leaving some cracks Spiro-OMeTAD. The photodetectors exhibit broadband response from near-ultraviolet to near-infrared (300-800 nm), achieving fast response (rise/fall time is 54.1/10.7 mu s) and low dark current density (9.72 x 10(-10) A cm(-2)). The detector can be self powered at zero bias voltage, the external quantum efficiency (EQE) is 88%, the Responsivity (R) is 0.48 A W-1, and the detectivity (D*) is close to 2.7 x 10(13) Jones. When the photovoltaic detector is placed in a nitrogen-filled glove box without special packaging for more than two months, the EQE remains 98.1% of the original. This study provides a simple method for fabricating a large area of high-performance planar PDs. (c) 2022 Elsevier B.V. All rights reserved.
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页数:12
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