Microstructural and domain effects in epitaxial CoFe2O4 films on MgO with perpendicular magnetic anisotropy

被引:20
作者
Comes, Ryan [1 ]
Gu, Man [2 ]
Khokhlov, Mikhail [3 ]
Lu, Jiwei [1 ]
Wolf, Stuart A. [1 ,2 ]
机构
[1] Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA
[2] Univ Virginia, Dept Phys, Charlottesville, VA 22904 USA
[3] Guilford Coll, Greensboro, NC 27410 USA
关键词
Magnetic thin films; Perpendicular magnetic anisotropy; CoFe2O4; Pulsed electron deposition; PULSED-LASER DEPOSITION; THIN-FILMS; DEFECTS; GROWTH; ORIGIN;
D O I
10.1016/j.jmmm.2011.08.033
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
CoFe2O4 (CFO) epitaxial thin films of various thicknesses were grown on MgO substrates using the pulsed electron-beam deposition technique. The films have excellent in-plane coherence with the substrate, exhibit layer-by-layer growth and have well-defined thickness fringes in x-ray diffraction measurements. Atomic force microscopy (AFM) measurements indicate that misfit dislocations form in thicker films and the critical thickness for the dislocation formation is estimated. Perpendicular magnetic anisotropy in CFO due to epitaxial in-plane tensile strain from the substrate was found. A stripe-like domain structure in the demagnetized state is demonstrated using magnetic force microscopy (MFM), in agreement with previous predictions. Coercivity increased in thicker films, which is explained by domain wall pinning due to misfit dislocations at the CFO/Mg interface. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:524 / 527
页数:4
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