Misfit Strain Relaxation of Ferroelectric PbTiO3/LaAlO3 (111) Thin Film System

被引:18
作者
Xu, Y. B. [1 ]
Tang, Y. L. [1 ]
Zhu, Y. L. [1 ]
Liu, Y. [1 ]
Li, S. [1 ]
Zhang, S. R. [1 ]
Ma, X. L. [1 ]
机构
[1] Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Peoples R China
基金
中国国家自然科学基金;
关键词
ATOMIC-RESOLUTION;
D O I
10.1038/srep35172
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Ferroelectric thin films grown on high index substrates show unusual structural and switching dynamics due to their special strain states. Understanding the misfit relaxation behavior is crucial to facilitate the high index thin film growth with improved quality. In this paper, ferroelectric PbTiO3 thin films were grown on LaAlO3 (111) substrates by pulsed laser deposition technique. The microstructures were investigated by combinations of conventional and aberration-corrected transmission electron microscopy. Diffraction contrast analysis and high resolution imaging reveal that high density interfacial dislocations were distributed at the interfaces. These dislocations have mixed character with Burgers vectors of a <110> and line directions of <112>. The edge components of the dislocations, with the Burgers vectors parallel to the interface, accommodate the lattice mismatch and are the main contributor to the misfit relaxation of this system. The formation mechanism of these dislocations is proposed and discussed to elucidate the novel mismatch relaxation behavior of <111> oriented perovskite films.
引用
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页数:8
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