Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy

被引:9
作者
Gacevic, Z. [1 ]
Fernandez-Garrido, S. [1 ]
Calleja, E. [1 ]
Luna, E. [2 ]
Trampert, A. [2 ]
机构
[1] Univ Politecn Madrid, ISOM, ETSI Telecommun, Dept Ingn Elect, Avda Complutense S-N, E-28040 Madrid, Spain
[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷
关键词
GAN;
D O I
10.1002/pssc.200880833
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate six to ten period lattice-matched In0.18Al0.82N/GaN distributed Bragg reflectors with peak reflectivity centred around 400 nm, grown by molecular beam epitaxy. Thanks to the well-tuned ternary alloy composition crack-free layers have been obtained as confirmed by both optical and scanning electron microscopy. In addition, cross-sectional analysis by high resolution transmission electron microscopy reveals highly periodic structure with abrupt interfaces. When the number of DBRs periods increased from six to ten, peak reflectivity increased from 45% to 60%. This increase was found to be in reasonable agreement with theoretical simulations. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:S643 / S645
页数:3
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