Properties of defect modes in one-dimensional optically induced photonic lattices

被引:37
作者
Fedele, F
Yang, JK [1 ]
Chen, ZG
机构
[1] Tsinghua Univ, Zhou Pei Yuan Ctr Appl Math, Beijing 100084, Peoples R China
[2] Univ Vermont, Burlington, VT 05405 USA
[3] San Francisco State Univ, San Francisco, CA 94132 USA
[4] Nankai Univ, Tianjin 300071, Peoples R China
关键词
D O I
10.1111/j.1467-9590.2005.00329.x
中图分类号
O29 [应用数学];
学科分类号
070104 ;
摘要
In this article, localized defect modes in one-dimensional optically induced photonic lattices are studied comprehensively. First, the origin of these defect modes is investigated analytically in the weak-defect limit by perturbation methods. It is shown that in an attractive defect where the lattice light intensity at the defect site is higher than that of nearby sites, a defect mode bifurcates from the left edge of every Bloch band; while in a repulsive defect, a defect mode bifurcates from the right edge of every Bloch band. When the defect is not weak, defect modes are examined by numerical methods. It is shown that in a repulsive defect, the strongest confinement of defect modes arises when the lattice light intensity at the defect site is nonzero rather than zero. In addition, as the potential strength increases, defect modes disappear from lower bandgaps and appear in higher bandgaps. In an attractive defect, however, defect modes persist in every bandgap as the potential strength increases. Using a piecewise-constant potential model, defect modes are calculated analytically for a general defect. The analytical results qualitatively explain the main features in numerical results.
引用
收藏
页码:279 / 301
页数:23
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