AlN Passivation Layer-Mediated Improvement in Tensile Failure of Flexible ZnO:Al Thin Films

被引：23

作者：

Choi, Hong Rak ^{[1
]}

Mohanty, Bhaskar Chandra ^{[1
]}

Kim, Jong Seong ^{[2
]}

Cho, Yong Soo ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[2] Samsung Elect Co, LCD R&D Ctr, Gyeonggi Do 446711, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2010年 / 2卷 / 09期

关键词：

flexible electronics; AlN passivation; ZnO thin films; crack density; fracture energy; MULTIPLE CRACKING; COATINGS;

D O I：

10.1021/am100386s

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-initiating bending strain epsilon(c) of only about 1.13% with a saturated crack density rho(s) of 0.10 mu m(-1) and a fracture energy Gamma of 49.6 J m(-2). On passivation by an AlN overlayer, the fracture energy of the system increased considerably and a corresponding improvement in epsilon(c) was observed. AlN layers deposited at higher discharge powers yielded higher fracture energy and exhibited better performance in terms of epsilon(c) and rho(s).

引用

页码：2471 / 2474

页数：4

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