Fabrication of p-type SrCuSeF/n-type In2O3:Sn bilayer ohmic tunnel junction and its application to the back contact of CdS/CdTe solar cells

被引：6

作者：

Kitabayashi, Shuya ^{[1
]}

Shiina, Yasuyoshi ^{[2
]}

Murata, Ayuki ^{[2
]}

Okamoto, Tamotsu ^{[2
]}

Wada, Takahiro ^{[1
]}

机构：

[1] Ryukoku Univ, Dept Chem Mat, Otsu, Shiga 5202194, Japan

[2] Kisarazu Coll, Natl Inst Technol, Kisarazu, Chiba 2920041, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 08期

基金：

日本科学技术振兴机构;

关键词：

TRANSPARENT THIN-FILMS; WIDE-BAND-GAP; ELECTRICAL-CONDUCTION; DELAFOSSITE STRUCTURE; GROWTH; OXIDE; DEPOSITION; SRCU2O2; CUALO2; ZNO;

D O I：

10.7567/JJAP.56.08MC18

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To develop polycrystalline thin-film tandem solar cells, a SrCuSeF/In2O3:Sn (ITO) bilayer film was studied. The transparent p-type conductive SrCuSeF layer was deposited by pulsed laser deposition (PLD), and the n-type conductive ITO layer was deposited by RF sputtering. The SrCuSeF/ITO bilayer film showed ohmic I-V characteristics. A tunnel junction between the p-type SrCuSeF and n-type ITO layers was successfully formed because the p-type SrCuSeF and the n-type ITO layers had sufficiently high carrier concentrations. The SrCuSeF/ITO bilayer film was applied as the back contact of a CdS/CdTe solar cell. The photovoltaic performance of the CdS/CdTe solar cell depends considerably on the thickness of the SrCuSeF layer. The CdTe solar cell with a back contact of the SrCuSeF layer with a thickness of 34 nm and the ITO layer with a thickness of 200nm showed a high conversion efficiency of 14.3% (V-OC = 804mV, J(SC) = 27.5mA/cm(2), and FF = 0.65). The conversion efficiency was much higher than that of the CdTe solar cell with the SrCuSeF single-layer back contact (11.6%) and that of the CdTe cell with the ITO single-layer back contact (2.75%). (C) 2017 The Japan Society of Applied Physics

引用

页数：6