Dielectric and ferroelectric properties of La, Nd and V substituted Bi4Ti3O12 ceramics

被引：0

作者：

Lee, SY ^{[1
]}

Ahn, CW

Lee, HJ

Kang, SH

Kim, JS

Kim, IW

Lee, KS

机构：

[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[2] Inje Univ, Dept Phys, Kimhae 621749, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2005年 / 46卷 / 01期

关键词：

ferroelectric properties; bismuth layered structure; lattice distortion; oxygen vacancy; leakage current;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The dielectric and ferroelectric properties of Bi4Ti3O12 (BIT), Bi3.25La0.75Ti3O12 (BLT), Bi3.25Nd0.75Ti3O12 (BNT), Bi3.25La0.75Ti2.97V0.03 (BLTV) and Bi3.25Nd0.75Ti2.97V0.03 (BNTV) ceramics are studied. All of the ceramics with strong (117) peak are consisted of a single phase layered perovskite structure without detectable secondary phase. Polarization (P)-electric field (E) hysteresis loop of the BIT ceramic is not saturated due to the leakage current, while saturated loops are measured in the BLT and BNT ceramics. La, Nd, V substituted BIT lead to a marked improvement in leakage current properties in the high electric held region.

引用

页码：337 / 340

页数：4

共 11 条

[1]

Ahn CW, 2003, J KOREAN PHYS SOC, V42, pS1334

[2] ELECTRICAL AND OPTICAL PROPERTIES OF FERROELECTRIC BI4TI3O12 SINGLE CRYSTALS [J].