Diode-pumped passively Q-switched Nd:GAGG laser at 938 nm with V3+:YAG saturable absorber

被引:27
作者
Liu, S. D. [1 ]
Zhang, B. T. [1 ]
He, J. L. [1 ]
Yang, H. W. [1 ]
Xu, J. L. [1 ]
Liu, F. Q. [1 ]
Yang, J. F. [1 ]
Yang, X. Q. [1 ]
Huang, H. T. [1 ]
机构
[1] Shandong Univ, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
基金
中国国家自然科学基金;
关键词
passively Q-switched; V3+:YAG; Nd:GAGG; diode-pumped laser; YTTRIUM-ALUMINUM-GARNET; ND-GGG CRYSTAL; YAG LASER; CW; V3+YAG; ABSORPTION; OPERATION; 1.34-MU-M; DYNAMICS;
D O I
10.1002/lapl.201010055
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The continuous wave (CW) and passively Q-switched Nd:Gd3AlxGa5-xO12 (Nd:GAGG) laser operation at 938 nm have been realized for the first time. The maximum CW output power of 0.44 W was obtained under the absorbed pump power of 8.54 W, corresponding to the slope efficiency of 7.8% and optical-to-optical efficiency of 5.2% respectively. A V3+:YAG saturable absorber crystal with the initial transmission of 97% was used for the passive Q-switching regime. The maximum average output power of 0.19 W was achieved with the minimum pulse width of 358 ns and Q-switched repetition rate of 116 kHz. The corresponding single pulse energy and pulse peak power were determined to be 1.6 mu J and 4.6 W, respectively. [GRAPHICS] (C) 2010 by Astro Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:715 / 718
页数:4
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