Formation of nickel germanide contacts to Ge nanowires

Nickel germanide contacts are expected to play an important role in Ge-based electronics similar to that of their nickel silicide counterparts in Si devices. Here we have studied the solid state reaction between Ni contact pads and Ge nanowires. We observe the formation of axial nickel germanide segments after annealing at temperatures as low as 300 degrees C for 2 min. The nickel germanide segments are polycrystalline, without an epitaxial relationship to the Ge nanowire, in contrast to observations of epitaxial nickel silicide formation from Si nanowires. The crystal structure of the nickel germanide phase is consistent with the Ni(2)In prototype structure. Annealing above 400 degrees C results in fracture in the nickel germanide segment; however, nickel germanide segments as long as 1.7 mu m can be formed by annealing at 400 degrees C for 5 min. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3533808]