Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

被引：49
|
作者：
Carey, Patrick H. [1 ]
Yang, Jiancheng [1 ]
Ren, F. [1 ]
Hays, David C. [2 ]
Pearton, S. J. [2 ]
Jang, Soohwan [3 ]
Kuramata, Akito [4 ,5 ]
Kravchenko, Ivan I. [6 ]
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] Dankook Univ, Dept Chem Engn, Yongin 16890, South Korea
[4] Tamura Corp, Sayama, Saitama 3501328, Japan
[5] Novel Crystal Technol Inc, Sayama, Saitama 3501328, Japan
[6] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37830 USA
来源：
AIP ADVANCES | 2017年 / 7卷 / 09期
基金：
新加坡国家研究基金会;
关键词：
ALUMINUM ZINC-OXIDE; TRANSPARENT CONDUCTIVE OXIDE; THIN-FILMS; GA2O3; LAYER;
D O I：
10.1063/1.4996172
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at >= 300 degrees C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Omega-mm and 2.82 x 10(-5) Omega-cm(2) were achieved after a relatively low temperature 400 degrees C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface. (C) 2017 Author(s).
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页数：6
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