Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

被引：52

作者：

Carey, Patrick H. ^{[1
]}

Yang, Jiancheng ^{[1
]}

Ren, F. ^{[1
]}

Hays, David C. ^{[2
]}

Pearton, S. J. ^{[2
]}

Jang, Soohwan ^{[3
]}

Kuramata, Akito ^{[4
,5
]}

Kravchenko, Ivan I. ^{[6
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Dankook Univ, Dept Chem Engn, Yongin 16890, South Korea

[4] Tamura Corp, Sayama, Saitama 3501328, Japan

[5] Novel Crystal Technol Inc, Sayama, Saitama 3501328, Japan

[6] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37830 USA

来源：

AIP ADVANCES | 2017年 / 7卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

ALUMINUM ZINC-OXIDE; TRANSPARENT CONDUCTIVE OXIDE; THIN-FILMS; GA2O3; LAYER;

D O I：

10.1063/1.4996172

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at >= 300 degrees C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Omega-mm and 2.82 x 10(-5) Omega-cm(2) were achieved after a relatively low temperature 400 degrees C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface. (C) 2017 Author(s).

引用

页数：6

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