Influence of swift heavy ion irradiation on the photoluminescence of Si-nanoparticles and defects in SiO2

被引：7

作者：

Chulapakorn, Thawatchart ^{[1
]}

Sychugov, Ilya ^{[2
]}

Suvanam, Sethu Saveda ^{[3
]}

Linnros, Jan ^{[2
]}

Primetzhofer, Daniel ^{[1
]}

Hallen, Anders ^{[3
]}

机构：

[1] Uppsala Univ, Dept Phys & Astron, POB 516, SE-75120 Uppsala, Sweden

[2] KTH Royal Inst Technol, Dept Mat & Nano Phys, SE-16440 Kista, Sweden

[3] KTH Royal Inst Technol, Sch Informat & Commun Technol, SE-16440 Kista, Sweden

来源：

NANOTECHNOLOGY | 2017年 / 28卷 / 37期

基金：

瑞典研究理事会;

关键词：

silicon nanoparticle; ion implantation; photoluminescence; swift heavy ion irradiation; AMORPHOUS-SILICON NANOPARTICLES; QUANTUM CONFINEMENT; TRACK FORMATION; ENERGY LOSS; NANOCRYSTALS; NANOSTRUCTURES; IMPLANTATION; MATRIX; MODEL; TEMPERATURE;

D O I：

10.1088/1361-6528/aa824f

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The influence of swift heavy ion (SHI) irradiation on the photoluminescence (PL) of silicon nanoparticles (SiNPs) and defects in SiO2-film is investigated. SiNPs were formed by implantation of 70 keV Si+ and subsequent thermal annealing to produce optically active SiNPs and to remove implantation-induced defects. Seven different ion species with energy between 3-36 MeV and fluence from 10(11)-10(14) cm(-2) were employed for irradiation of the implanted samples prior to the thermal annealing. Induced changes in defect and SiNP PL were characterized and correlated with the specific energy loss of the employed SHIs. We find that SHI irradiation, performed before the thermal annealing process, affects both defect and SiNP PL. The change of defect and SiNP PL due to SHI irradiation is found to show a threshold-like behaviour with respect to the electronic stopping power, where a decrease in defect PL and an anticorrelated increase in SiNP PL after the subsequent thermal annealing are observed for electronic stopping exceeding 3-5 keV nm(-1). PL intensities are also compared as a function of total energy deposition and nuclear energy loss. The observed effects can be explained by ion track formation as well as a different type of annealing mechanisms active for SHI irradiation compared to the thermal annealing.

引用

页数：8

共 59 条

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