A high performance broadband photodetector based on (SnxSb1-x)2Se3 nanorods with enhanced electrical conductivity

Sb2Se3 is a highly interesting narrow band gap semiconductor with promising applications in newgeneration electronic and photoelectronic devices. However, it has intrinsically low electrical conductivity, which limits its broader scope of applications. To overcome this challenge, Sn-doped Sb2Se3 ((SnxSb1-x)(2)Se-3) nanorods with enhanced electrical conductivity are firstly synthesized via a facile hot-injection method. With increasing the doping concentration of Sn4+, the (SnxSb1-x)(2)Se-3 nanorods exhibit several orders of magnitude improvement in electrical conductivity, which originates from the increase of carrier concentration. The photodetector based on the (SnxSb1-x)(2)Se-3 nanorod film shows a higher responsivity (6.21 A W-1) and external quantum efficiency (906%), a lower noise equivalent power (3.14 x 10(-13) W Hz(-1/2)), and a fast response time (0.04 s), surpassing the performance of the Sb2Se3 nanorod film photodetector. In addition, the (SnxSb1-x)(2)Se-3 nanorod film photodetector also displays a broadband spectral response ranging from UV to IR. Those excellent performances unambiguously demonstrate that the (SnxSb1-x)(2)Se-3 nanorods are promising for utilization as highly efficient broadband photodetectors.