AlGaInP LEDs Prepared by Contact-Transferred and Mask-Embedded Lithography

被引：11

作者：

Lo, H. M. ^{[1
]}

Hsieh, Y. T. ^{[2
]}

Shei, S. C. ^{[3
]}

Lee, Y. C. ^{[2
]}

Zeng, X. F. ^{[3
]}

Weng, W. Y. ^{[1
]}

Lin, N. M. ^{[4
]}

Chang, S. J. ^{[1
,5
,6
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Mech Engn, Tainan 70101, Taiwan

[3] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan

[4] Natl Cheng Kung Univ, Inst Nanotechnol & Microsyst Engn, Tainan 70101, Taiwan

[5] Natl Cheng Kung Univ, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[6] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2010年 / 46卷 / 12期

关键词：

AlGaInP; light-emitting diodes; nanoimprint; LIGHT-EMITTING-DIODES; EXTRACTION EFFICIENCY; IMPRINT LITHOGRAPHY; SURFACE; PERFORMANCE; FABRICATION; LAYER;

D O I：

10.1109/JQE.2010.2048742

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of AlGaInP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.39, 2.29, 2.39, 2.24, 2.21, and 2.25-V while the 20 mA output powers were 1.43, 1.42, 1.38, 1.35, 1.28, 1.22, and 1.16 mW for CMEL-400-nm LED, CMEL-600-nm LED, CMEL-800-nm LED, CMEL-1-mu m LED, CMEL-2-mu m LED, CMEL-3-mu m, and the conventional LED without CMEL, respectively.

引用

页码：1834 / 1839

页数：6

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