Formation of InGaAs strained quantum wires on GaAs vicinal (110) substrates grown by molecular beam epitaxy

被引：5

作者：

Shim, BR ^{[1
]}

Torii, S ^{[1
]}

Ota, T ^{[1
]}

Kobayashi, K ^{[1
]}

Maehashi, K ^{[1
]}

Hasegawa, S ^{[1
]}

Inoue, K ^{[1
]}

Nakashima, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 567, Japan

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 7-8期

关键词：

D O I：

10.1016/S0038-1101(98)00080-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAs quantum wires (QWRs) are naturally formed on GaAs vicinal (110) substrates by molecular beam epitaxy (MBE). These QWRs are induced by thickness modulation at coherently aligned giant step edges. Atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (TEM) observations show the uniformity of giant steps and thickness modulation at giant step edges on GaAs vicinal(110) substrates. Photoluminescence (PL) measurements reveal that the PL spectra of InGaAs QWRs sample show lower energy shift as compared to those of InGaAs quantum well (QWL) on GaAs (100) substrates grown at the same time. This is consistent with the thickness modulation at the giant step edges. The PL observation evidences the carrier confinement in the QWRs. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1609 / 1612

页数：4

共 4 条

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