Surface-roughening processes in GaAs MBE studied by in situ scanning electron microscopy

被引：2
作者：
Tanahashi, K
Kawamura, Y
Inoue, N
Homma, Y
Osaka, J
机构：
[1] Osaka Prefecture Univ, Sakai, Osaka 593, Japan
[2] NTT Corp, Sci & Core Technol Labs, Musashino, Tokyo 180, Japan
[3] NTT Corp, Syst Elect Labs, Atsugi, Kanagawa 24301, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 188卷 / 1-4期
关键词：
molecular beam epitaxy; GaAs; surface roughening; electron microscopy;
D O I：
10.1016/S0022-0248(98)00066-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Surface-roughening processes in the molecular-beam epitaxy of GaAs is studied by in-situ scanning electron microscopy. Three types of onset of roughening are observed, smooth-to-rough change, coexistence of rough and smooth growths, and purely rough growth. The results are compared with the quasi-smooth growth and to the growth of silicon on (1 1 1) surfaces. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：205 / 210
页数：6
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