Implantation damage in heavy gas implanted 4H-SiC

被引：8

作者：

Jiang, C. ^{[1
]}

Nicolai, J. ^{[1
]}

Declemy, A. ^{[1
]}

Gilabert, E. ^{[2
]}

Beaufort, M. -F. ^{[1
]}

Barbot, J. -F. ^{[1
]}

机构：

[1] Univ Poitiers, Inst Pprime, CNRS, ENSMA,Dept Phys & Mecan Mat,UPR 3346, Bd Marie & Pierre Curie,BP 30179, F-86962 Futuroscope, France

[2] Ctr Etud Nucl Bordeaux Gradignan, F-33175 Gradignan, France

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2016年 / 374卷

关键词：

SiC; Gas-implantation; Strain; STACKING-FAULT FORMATION; SILICON-CARBIDE; DIFFERENT TEMPERATURES; STRAIN BUILDUP; AMORPHIZATION; DEFECTS;

D O I：

10.1016/j.nimb.2016.01.002

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Single crystals of SiC were implanted with heavy inert gases (Xe, Ar) at elevated temperatures (300-800 degrees C) and for a large range of fluence (1 x 10(12)-1 x 10(15) ions cm(-2)). Thermodesorption measurements suggest that gas is trapped by implantation-induced vacancy-type defects impeding any gas diffusion. The damage accumulation versus dose was studied through the tensile elastic strain determined by using X-ray diffraction. Results show that at low dose the strain is predictable via a thermally activated direct impact model. The low thermal activation energy at saturation suggests a dynamic recovery process dominated by the migration of interstitial-type defects as its relaxation during post thermal annealing. As compared with light-gas implantation the heavy-gas to defect ratio is low enhancing the formation of strongly perturbed zones rather than the formation of bubble precursors. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：71 / 75

页数：5

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