An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application

被引：198

作者：

Xue HuiWen ^{[1
,2
]}

He QiMing ^{[2
]}

Jian GuangZhong ^{[2
]}

Long ShiBing ^{[3
]}

Pang Tao ^{[1
]}

Liu Ming ^{[2
,3
]}

机构：

[1] Sichuan Agr Univ, Coll Mech & Elect Engn, Yaan 625014, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrat Technol, Beijing 100029, Peoples R China

[3] Univ Sci & Technol China, Sch Microelect, Hefei 230026, Anhui, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2018年 / 13卷

关键词：

Gallium oxide (Ga2O3); Ultrawide bandgap semiconductor; Power device; Schottky barrier diode (SBD); Breakdown electric field; Baliga's figure of merit; On-resistance; BETA-GA2O3; SINGLE-CRYSTALS; ELECTRICAL CHARACTERISTICS; THIN-FILM; CONTACTS; GROWTH; SENSOR; NI/AU;

D O I：

10.1186/s11671-018-2712-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Gallium oxide (Ga2O3) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga's figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga-,03 semiconductor have been analyzed. And the recent investigations on the Ga2O3-based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga2O3-based SBD for power electronics application has been analyzed.

引用

页数：13

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