Atomic-scale characterization of structural heterogeny in 2D TMD layers

被引:11
作者
Li, Hao [1 ,5 ]
Yoo, Changhyeon [1 ]
Ko, Tae-Jun [1 ,6 ]
Kim, Jung Han [2 ]
Jung, Yeonwoong [1 ,3 ,4 ]
机构
[1] Univ Cent Florida, NanoSci Technol Ctr, Orlando, FL 32826 USA
[2] Dong A Univ, Dept Mat Sci & Engn, Busan 49315, South Korea
[3] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32816 USA
[4] Univ Cent Florida, Dept Mat Sci & Engn, Orlando, FL 32826 USA
[5] McGill Univ, Dept Min & Mat Engn, Montreal, PQ H3A 0E9, Canada
[6] ADA Sci & Res Inst, Dept Innovat & Technol Res, Gaithersburg, MD 20879 USA
来源
MATERIALS ADVANCES | 2022年 / 3卷 / 03期
关键词
TRANSITION-METAL DICHALCOGENIDES; 2-DIMENSIONAL HETEROSTRUCTURES; MOS2; LAYERS; MOLYBDENUM; GROWTH; ORIENTATION; DEFECTS; OPTOELECTRONICS; ELECTRONICS; STRATEGIES;
D O I
10.1039/d1ma01013a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The heterogeneity features in 2-dimensional (2D) transition metal dichalcogenide (TMD) layered materials endow them with distinctive properties for a vast array of novel applications. Their unique properties stem from the various aspects of atomic displacements of in-plane and cross-boundary interfacial defects. Understanding and gaining insights into the formation and evolution of these structural defects and heterogeneities provide rich information for tailoring the properties of the corresponding materials and devices as well as future designs of new heterostructures and heterointerfaces. Transmission electron microscopy (TEM) is a widely-adopted characterization technique for the direct visualization of atomic defects across a plethora of 2D TMD surfaces and interfaces. The present review aims to summarize the atomic scale TEM characterization of heterogeny in 2D TMD layers, featuring structural and chemical disorders and heterointerfaces in 2D TMD layers, as well as the in situ observation of the transition and evolution of defects and interfaces via TEM in addition to the generation and manipulation of defects and heterointerfaces.
引用
收藏
页码:1401 / 1414
页数:14
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