Localized Energy Band Bending in ZnO Nanorods Decorated with Au Nanoparticles

被引:15
作者
Bruno, Luca [1 ,2 ]
Strano, Vincenzina [1 ,2 ]
Scuderi, Mario [3 ]
Franzo, Giorgia [2 ]
Priolo, Francesco [1 ,2 ]
Mirabella, Salvo [1 ,2 ]
机构
[1] Univ Catania, Dept Phys & Astron Ettore Majorana, Via S Sofia 64, I-95123 Catania, Italy
[2] IMM CNR, Via S Sofia 64, I-95123 Catania, Italy
[3] IMM CNR, 8 Str 5, I-95121 Catania, Italy
关键词
Au nanoparticles synthesis; zinc oxide nanorods; decoration; energy bands modification; luminescence; halo effect; MOTT-SCHOTTKY ANALYSIS; PHOTOCATALYTIC ACTIVITY; PHOTOLUMINESCENCE; ZINC; LUMINESCENCE; NANOSTRUCTURES; SEMICONDUCTOR; ELECTRODES; SIZE;
D O I
10.3390/nano11102718
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Surface decoration by means of metal nanostructures is an effective way to locally modify the electronic properties of materials. The decoration of ZnO nanorods by means of Au nanoparticles was experimentally investigated and modelled in terms of energy band bending. ZnO nanorods were synthesized by chemical bath deposition. Decoration with Au nanoparticles was achieved by immersion in a colloidal solution obtained through the modified Turkevich method. The surface of ZnO nanorods was quantitatively investigated by Scanning Electron Microscopy, Transmission Electron Microscopy and Rutherford Backscattering Spectrometry. The Photoluminescence and Cathodoluminescence of bare and decorated ZnO nanorods were investigated, as well as the band bending through Mott-Schottky electrochemical analyses. Decoration with Au nanoparticles induced a 10 times reduction in free electrons below the surface of ZnO, together with a decrease in UV luminescence and an increase in visible-UV intensity ratio. The effect of decoration was modelled with a nano-Schottky junction at ZnO surface below the Au nanoparticle with a Multiphysics approach. An extensive electric field with a specific halo effect formed beneath the metal-semiconductor interface. ZnO nanorod decoration with Au nanoparticles was shown to be a versatile method to tailor the electronic properties at the semiconductor surface.
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页数:11
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