Reliability and reliability investigation of wide-bandgap power devices

被引：11

作者：

Lutz, Josef ^{[1
]}

Franke, Joerg ^{[1
]}

机构：

[1] Tech Univ Chemnitz, Fac ET IT, D-09126 Chemnitz, Germany

来源：

MICROELECTRONICS RELIABILITY | 2018年 / 88-90卷

关键词：

Gate oxide; SiC MOSFET; GaN HEMT; GaN Cif; Power cycling;

D O I：

10.1016/j.microrel.2018.07.001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Established reliability test procedures from Si can widely be applied to SiC, however there are some differences and special challenges. A new test procedure for the gate oxide reliability is suggested, it leads to evaluable results within a reasonable time. Temperature-sensitive electrical parameters (TSEPs), which are necessary for power cycling tests, are investigated. For the SiC MOSFET and the GaN GIT, possible TSEPs are compared and applied to power cycling tests. GaN-based devices have further issues regarding reliability, like charge trapping, dynamic R-on, and degradation effects. The test matrix from Si is not sufficient to cover the reliability requirements for GaN.

引用

页码：550 / 556

页数：7

共 22 条

[1]

[Anonymous], 2014, QUALIFICATION POWER

[2]

Beier-Mobius Menia, 2017, PCIM Europe 2017. International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Proceedings, P365

[3]

Beier-Mobius M., 2016, PCIM EUROPE 2016 INT, P172

[4] TRANSIENT THERMAL RESPONSE MEASUREMENTS OF POWER TRANSISTORS [J].

BLACKBURN, DL ;

OETTINGER, FF .

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS AND CONTROL INSTRUMENTATION, 1975, IE22 (02) :134-141

[5]

Cooper JA, 1997, IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, PROCEEDINGS, P236, DOI 10.1109/CORNEL.1997.649363

[6] Effect of simulation methodology on solder joint crack growth correlation and fatigue life prediction [J].

Darveaux, R .

JOURNAL OF ELECTRONIC PACKAGING, 2002, 124 (03) :147-154

[7]

Franke J, 2018, PROC INT SYMP POWER, P467, DOI 10.1109/ISPSD.2018.8393704

[8]

Herold C., 2017, 2017 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Proceedings, P367, DOI 10.23919/ISPSD.2017.7988994

[9]

Herold C., 2014, P CIPS 2014 ETG FACH, P36

[10] Requirements in power cycling for precise lifetime estimation [J].

Herold, Christian ;

Franke, Joerg ;

Bhojani, Riteshkumar ;

Schleicher, Andre ;

Lutz, Josef .

MICROELECTRONICS RELIABILITY, 2016, 58 :82-89

← 1 2 3 →