Electrical and physical characteristics of HfLaON-gated metal-oxide-semiconductor capacitors with various nitrogen concentration profiles

被引：3
作者：
Cheng, Chin-Lung [1 ,2 ]
Horng, Jeng-Haur [1 ]
Tsai, Hung-Yang [1 ]
机构：
[1] Natl Formosa Univ, Inst Mech & Electromech Engn, Yunlin 63201, Taiwan
[2] Natl Formosa Univ, Dept Electroopt Engn, Yunlin 63201, Taiwan
来源：
MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 02期
关键词：
High-k dielectric; Charge trapping; Current-conduction; Nitrogen concentration profiles (NCPs); Metal-oxide-semiconductor (MOS); CONSTANT-VOLTAGE STRESS; MOS DEVICES; THIN-FILMS; DIELECTRICS; BULK; DEGRADATION; TRANSISTORS; ABSORPTION; GENERATION; INTERFACE;
D O I：
10.1016/j.mee.2010.10.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The comparative studies of electrical and physical characteristics of HfLaON-gated metal-oxide-semiconductor (MOS) capacitors with various nitrogen concentration profiles (NCPs) were investigated. Various NCPs in HfLaON gate dielectrics were adjusted by Hf(2)La(2)O(7) target sputtered in an ambient of modulated nitrogen flow. The related degradation mechanisms of various NCPs in HfLaON dielectrics have been investigated under various post-deposition annealing (PDA). The results indicate that by developing full nitrogen profile (FNP) incorporated into HfLaON dielectric enhances electrical characteristics, including oxide trap charge, interface trap density, and trap energy level. Detailed understand of current mechanisms of various NCPs incorporated into HfLaON dielectrics using current-voltage characteristics under various temperature measurements were investigated. Energy band diagram of MOS capacitor with Ta/HfLaON/SiO(2)/P-Si(1 0 0) structure was demonstrated by the measurement of Schottky barrier height and the optical band gaps. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：159 / 165
页数：7
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