Estimation of compensation ratio by identifying the presence of different hopping conduction mechanisms in SnO2 thin films

被引:36
作者
Serin, N. [2 ]
Yildiz, A. [1 ]
Alsac, A. A. [2 ]
Serin, T. [2 ]
机构
[1] Ahi Evran Univ, Fac Sci & Arts, Dept Phys, TR-40040 Kirsehir, Turkey
[2] Ankara Univ, Fac Engn, Dept Engn Phys, TR-06100 Ankara, Turkey
关键词
Conduction mechanism; Tin oxide; Nearest-neighbour hopping; Variable-range hopping; Compensation ratio; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; POLYCRYSTALLINE; SEMICONDUCTORS; TEMPERATURE; THICKNESS; SILICON;
D O I
10.1016/j.tsf.2010.11.027
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electrical properties of undoped SnO2 thin films prepared by the sol-gel technique were investigated by conductivity measurements in a temperature range of 50-200 K. Structural characterizations of the films were performed by atomic force microscopy and X-ray diffraction. Optical properties of the samples were also characterized by optical absorption spectroscopy. The different hopping models were used to investigate the characteristics of electrical conduction by hopping in employed temperature range. It was shown that three types of behavior can be expected, nearest-neighbour hopping at high temperatures, the Mott variable-range hopping at low temperatures and Efros-Shklovskii variable-range hopping at lower temperatures. The criteria for the observation of these three regions were established and the transitional behavior of the conductivity was determined. The experimentally determined critical transition temperatures were at the orders of magnitudes with what could be expected based on hopping conduction calculations. Under these analyses, the compensation ratio of the films was determined. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:2302 / 2307
页数:6
相关论文
共 27 条
[1]   Temperature dependence of DC conductivity of as-deposited and annealed selenium films [J].
Abdul-Gader, MM ;
Al-Basha, MA ;
Wishah, KA .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1998, 85 (01) :21-41
[2]  
[Anonymous], 1972, J NON-CRYST SOLIDS
[3]  
Cullity B. D., 1978, ELEMENTS XRAY DIFFRA
[4]   Optical and diode like current-voltage characteristics of SnO2-polypyrrole nanocomposites [J].
Dutta, Kousik ;
De, S. K. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (03) :734-739
[5]  
Fritzsche H., 1974, AMORPHOUS LIQUID SEM
[6]   BAND-GAP ASSIGNMENT IN SNO2 BY 2-PHOTON SPECTROSCOPY [J].
FROHLICH, D ;
KENKLIES, R ;
HELBIG, R .
PHYSICAL REVIEW LETTERS, 1978, 41 (25) :1750-1751
[7]  
*INT CTR DIFFR DAT, 1991, 411445 INT CTR DIFFR
[8]   Electron transport properties of undoped SnO2 monocrystals [J].
Lanfredi, Alexandre J. C. ;
Geraldes, Renan R. ;
Berengue, Olivia M. ;
Leite, Edson R. ;
Chiquito, Adenilson J. .
JOURNAL OF APPLIED PHYSICS, 2009, 105 (02)
[9]   UV-violet photoluminescence emitted from SnO2:Sb thin films at different temperature [J].
Ma, J ;
Wang, YH ;
Ji, F ;
Yu, XH ;
Ma, HL .
MATERIALS LETTERS, 2005, 59 (17) :2142-2145
[10]   HOPPING CONDUCTION IN NORMAL-TYPE INDIUM-PHOSPHIDE [J].
MANSFIELD, R ;
ABBOUDY, S ;
FOZOONI, P .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (06) :777-789