Rashba spin splitting of the minibands of coupled InAs/GaAs pyramid quantum dots

被引：23

作者：

Zhang, Xiu-Wen ^{[1
,2
]}

Xu, Qiang ^{[1
,2
]}

Fan, Wei-Jun ^{[1
]}

Luo, Jun-Wei ^{[2
]}

Li, Shu-Shen ^{[2
]}

Xia, Jian-Bai ^{[2
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstructures, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 14期

基金：

中国国家自然科学基金;

关键词：

Semiconductor quantum dots;

D O I：

10.1063/1.2907690

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Rashba spin splitting of the minibands of coupled InAs/GaAs pyramid quantum dots is investigated using the k center dot p method and valence force field model. The Rashba splitting of the two dimensional miniband in the lateral directions is found due to the structure inversion asymmetry in the vertical direction while the miniband in the vertical direction has no Rashba spin splitting. As the space between dots increases, the Rashba coefficients decrease and the conduction-band effective mass increases. This Rashba spin splitting of the minibands will significantly affect the spin transport properties between quantum dots. (C) 2008 American Institute of Physics.

引用

页数：3

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