Electron effective mobility in strained-Si/Si1-xGex MOS devices using Monte Carlo simulation

被引：44
作者：
Aubry-Fortuna, V [1 ]
Dollfus, P [1 ]
Galdin-Retailleau, S [1 ]
机构：
[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
来源：
SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 08期
关键词：
strained-Si; effective mobility; Monte Carlo simulation; MOSFET;
D O I：
10.1016/j.sse.2005.06.013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on Monte Carlo simulation, we report the study of the inversion layer mobility in n-channel strained-Si/Si-1-Ge-x(x) MOS structures. The influence of the strain in the Si layer and of the doping level is studied. Universal mobility curves mu(eff) as a function of the effective vertical field E-eff are obtained for various state of strain, as well as a fall-off of the mobility in weak inversion regime, which reproduces correctly the experimental trends. We also observe a mobility enhancement up to 120% for strained-Si/ Si0.70Ge0.30, in accordance with best experimental data. The effect of the strained-Si channel thickness is also investigated: when decreasing the thickness, a mobility degradation is observed under low effective field only. The role of the different scattering mechanisms involved in the strained-Si/Si1-xGex MOS structures is explained. In addition, comparison with experimental results is discussed in terms of SiO2/Si interface roughness, as well as surface roughness of the SiGe substrate on which strained-Si is grown. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1320 / 1329
页数：10
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