Fabrication of phase-change chalcogenide Ge2Sb2Te5 patterns by laser-induced forward transfer

被引：47
|
作者：
Tseng, Ming Lun [1 ,2 ]
Chen, Bo Han [1 ,2 ]
Chu, Cheng Hung [1 ,2 ]
Chang, Chia Min [1 ,2 ]
Lin, Wei Chih [2 ]
Chu, Nien-Nan [3 ]
Mansuripur, Masud [4 ]
Liu, Ai Qun [5 ]
Tsai, Din Ping [1 ,2 ,3 ,6 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 106, Taiwan
[2] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
[3] Natl Appl Res Labs, Instrument Technol Res Ctr, Hsinchu 300, Taiwan
[4] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA
[5] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[6] Acad Sinica, Res Ctr Appl Sci, Taipei 115, Taiwan
来源：
OPTICS EXPRESS | 2011年 / 19卷 / 18期
关键词：
CHANGE RECORDING LAYER; DATA-STORAGE; THIN-FILMS; CRYSTALLIZATION; MARKS; DEPOSITION; TRANSITIONS; LIQUIDS;
D O I：
10.1364/OE.19.016975
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Femtosecond laser pulses are focused on a thin film of Ge2Sb2Te5 phase-change material, and the transfer of the illuminated material to a nearby substrate is investigated. The size, shape, and phase-state of the fabricated pattern can be effectively controlled by the laser fluence and by the thickness of the Ge2Sb2Te5 film. Results show multi-level electrical and optical reflection states of the fabricated patterns, which may provide a simple and efficient foundation for patterning future phase-change devices. (C) 2011 Optical Society of America
引用
收藏
页码：16975 / 16984
页数：10
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