InGaN/GaN blue light emitting diodes using Al-doped ZnO grown by atomic layer deposition as a current spreading layer

被引:14
作者
Kong, Bo Hyun [1 ]
Cho, Hyung Koun [1 ]
Kim, Mi Yang [2 ]
Choi, Rak Jun [2 ]
Kim, Bae Kyun [2 ]
机构
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi Do, South Korea
[2] Samsung Electromech Co, Anal Engineer & Analyt Res Grp, Corp R&D Inst, Suwon 442743, Gyeonggi Do, South Korea
关键词
Doping; Atomic layer epitaxy; Nitrides; Semiconducting III-V materials; Semiconducting II-VI materials; Light emitting diodes; FILMS;
D O I
10.1016/j.jcrysgro.2011.01.085
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
For the fabrication of InGaN/GaN multiple quantum well-based blue light emitting diodes (LEDs) showing large area emission, transparent Al-doped ZnO (AZO) films grown by atomic layer deposition at relatively low temperatures were introduced as current spreading layers. These AZO films with an Al content of 3 at% showed a low electrical resistivity of <10(-3)-10(-4) Omega cm, a high carrier concentration of >10(20) cm(-3), and an excellent optical transmittance of similar to 85%, in spite of the low growth temperature. The deposition of the AZO film induced an intense blue emission from the whole surface of the p-GaN and weak ultraviolet emission from the n-AZO and p-GaN junction. At an injection current of 50 mA, the output powers of the blue LEDs were 1760 and 1440 mcd for the samples with AZO thicknesses of 100 and 300 nm, respectively. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:147 / 151
页数:5
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