Integrated Rare-Earth Doped Mode-Locked Lasers on a CMOS Platform

被引:3
|
作者
Kaertner, Franz X. [1 ,2 ,3 ]
Callahan, Patrick T. [1 ]
Shtyrkova, Katia [1 ,5 ]
Li, Nanxi [1 ,4 ]
Singh, Neetesh [1 ]
Xin, Ming [1 ,2 ,3 ]
Koustuban, Ravi [1 ]
Notaros, Jelena [1 ]
Magden, E. Salih [1 ]
Vermeulen, Diedrik [1 ]
Ippen, Erich P. [1 ]
Watts, Michael R. [1 ]
机构
[1] MIT, Res Lab Elect, 77 Massachusetts Ave, Cambridge, MA 02139 USA
[2] DESY, Ctr Free Electron Laser Sci, Notkestr 85, D-22607 Hamburg, Germany
[3] Univ Hamburg, Notkestr 85, D-22607 Hamburg, Germany
[4] Harvard Univ, John A Paulson Sch Engn & Appl Sci, 29 Oxford St, Cambridge, MA 02138 USA
[5] MIT, Lincoln Lab, 244 Wood St, Lexington, MA 02420 USA
来源
SILICON PHOTONICS: FROM FUNDAMENTAL RESEARCH TO MANUFACTURING | 2018年 / 10686卷
关键词
integrated optics; integrated mode-locked lasers; silicon photonics; rare-earth mode-locked lasers; ADDITIVE-PULSE; POWER;
D O I
10.1117/12.2318010
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Mode-locked lasers provide extremely low jitter optical pulse trains for a number of applications ranging from sampling of RF-signals and optical frequency combs to microwave and optical signal synthesis. Integrated versions have the advantage of high reliability, low cost and compact. Here, we describe a fully integrated mode-locked laser architecture on a CMOS platform that utilizes rare-earth doped gain media, double-chirped waveguide gratings for dispersion compensation and nonlinear Michelson Interferometers for generating an artificial saturable absorber to implement additive pulse mode locking on chip. First results of devices at 1.9 mu m using thulium doped aluminum-oxide glass and operating in the Q-switched mode locking regime are presented.
引用
收藏
页数:11
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