Self-rectifying and forming-free resistive switching behaviors in Pt/ La2Ti2O7/Pt structure

被引：13
|
作者：
Deng, Yibo [1 ]
Xu, Xiaoguang [1 ]
Xu, Zedong [2 ]
Wang, Mengxi [1 ]
Liu, Qi [2 ]
Ma, Yingli [1 ]
Chen, Jikun [1 ]
Meng, Kangkang [1 ]
Wu, Yong [1 ]
Miao, Jun [1 ]
Jiang, Yong [1 ]
机构：
[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
[2] Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2022年 / 48卷 / 04期
基金：
中国国家自然科学基金; 北京市自然科学基金;
关键词：
Self-rectifying; Forming-free; Resistive switching; Lanthanum titanium oxide; Schottky barrier; MEMORY; VOLTAGE; OXIDE;
D O I：
10.1016/j.ceramint.2021.11.005
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work, we report the resistive switching behavior of an amorphous La2Ti2O7 (LTO) film as sandwiched between two Pt electrodes. The resistive switching is forming-free and highly uniform. Furthermore, it exhibits self-rectifying resistive switching behaviors owing to the Schottky contact and quasi-ohmic contact formed at the top and bottom interfaces, respectively. The mechanism of switching behavior in the device is attributed to the trapping/detrapping-mediated electronic bipolar resistance switching. By fitting the current-voltage characteristics, it indicates the coexistent conduction mechanisms of Schottky emission and space-charge-limitedconduction (SCLC), while the Schottky barrier modified by electron trapping/detrapping plays a dominating role in the resistive switching process.
引用
收藏
页码：4693 / 4698
页数：6
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