Defect analysis in bonded and H+ split silicon-on-insulator wafers by photoluminescence spectroscopy and transmission electron microscopy

被引：19

作者：

Tajima, M

Ogura, A

Karasawa, T

Mizoguchi, A

机构：

[1] Inst Space & Astronaut Sci, Sagamihara, Kanagawa 2298510, Japan

[2] NEC Corp Ltd, Silicone Syst Res Labs, Tsukuba, Ibaraki 3058501, Japan

[3] Keio Univ, Fac Sci & Technol, Yokohama, Kanagawa 2238522, Japan

[4] Tokai Univ, Sch Engn, Hiratsuka, Kanagawa 2591292, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 10B期

关键词：

silicon-on-insulator; photoluminescence; transmission electron microscopy; oxygen precipitation; Unibond wafer; Smart-Cut;

D O I：

10.1143/JJAP.37.L1199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Defects in silicon-on-insulator wafers fabricated by bonding and H+ splitting technique (Unibond wafers [Unibond is a registered trademark of SOITEC.]) were characterized by photoluminescence (PI,) spectroscopy together with transmission electron microscopy (TEM). PL from the superficial Si layer and that from the supporting substrate were separately analyzed using UV and visible light as an excitation source, respectively. The deep-level PL band appeared around 0.8 eV both in the superficial layer and the substrate with a spectral shape similar to that often observed in oxygen precipitated Si crystals. Correspondingly, TEM observation revealed precipitates and related defects. These results allow us to conclude that the defects in Unibond wafers originate in oxygen precipitation during the two-step annealing in the wafer fabrication process.

引用

页码：L1199 / L1201

页数：3

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