Interfacial gradient energy band alignment modulation via ion exchange reaction toward efficient and stable methylammonium-free Dion-Jacobson quasi-2D perovskite solar cells

被引:24
作者
Su, Pengyu [1 ]
Bai, Le [2 ]
Bi, Huan [2 ]
Liu, Baibai [2 ]
Chen, Shi [3 ]
Lee, Donghwa [4 ]
Yang, Hua [5 ]
Chen, Cong [6 ]
Zang, Zhigang [2 ]
Chen, Jiangzhao [2 ]
机构
[1] Yangtze Normal Univ, Sch Elect Informat Engn, Chongqing 408100, Peoples R China
[2] Chongqing Univ, Coll Optoelect Engn, Key Lab Optoelect Technol & Syst, Minist Educ, Chongqing 400044, Peoples R China
[3] Univ Macau, Inst Appl Phys & Mat Engn, Joint Key Lab Minist Educ, Ave Univ, Taipa 999078, Macao, Peoples R China
[4] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 37673, South Korea
[5] Univ Chinese Acad Sci CAS, Spallat Neutron Source Sci Ctr, Inst High Energy Phys, Dongguan 523803, Peoples R China
[6] Hebei Univ Technol, Sch Mat Sci & Engn, State Key Lab Reliabil & Intelligence Elect Equip, Dingzigu Rd 1, Tianjin 300130, Peoples R China
关键词
Quasi-2D perovskite solar cells; Dion-Jacobson perovskite; Methylammonium-free; Gradient energy band alignment; Ion exchange; HIGHLY EFFICIENT; PERFORMANCE;
D O I
10.1016/j.jpowsour.2021.230213
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Dion-Jacobson (DJ) quasi-2D perovskite solar cells (PSCs) have attracted significant attention owing to its greater potentials in realizing efficient and stable quasi 2D PSCs as compared to Ruddlesden-Popper counterpart. To further enhance power conversion efficiency (PCE) and stability, the fabrication of methylammonium-free formamidinium (FA)-based DJ quasi-2D PSCs is highly desirable. Herein, we report a strategy for constructing gradient energy band alignment by achieving gradient Br doping (GBD) via in situ ion exchange reaction between I and Br in FA-based DJ quasi-2D PSCs. First, the gradient energy band alignment can facilitate carrier transport, extraction and transfer. Second, the improved crystallinity and reduced defect density due to recrystallization process are realized after FABr treatment. Finally, the incorporation of Br also contributes to increased device stability. The device with GBD achieves a much higher PCE of 16.75% than control device (13.78%), which is mainly as a consequence of a significantly boosted V-OC from 0.970 V to 1.107 V due to suppressed bulk and interfacial nonradiative recombination. The unencapsulated device with GBD maintains 93% of its initial PCE after aging under the relative humidity range of 15-20% for 1600 h, and 91% after aging at 60 degrees C for 400 h.
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页数:8
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