Initial stages of the Graphite-SiC(0001) interface formation studied by photoelectron Spectroscopy

被引：56

作者：

Emtsev, K. V. ^{[1
]}

Seyller, Th. ^{[1
]}

Speck, F. ^{[1
]}

Ley, L. ^{[1
]}

Stojanov, P. ^{[2
]}

Riley, J. D. ^{[2
]}

Leckey, R. G. C. ^{[2
]}

机构：

[1] Univ Erlangen Nurnberg, Lehrstuhl Tech Phys, Erwin Rommel Str 1, D-91058 Erlangen, Germany

[2] La Trobe Univ, Dept Phys, Bundoora, Vic 3083, Australia

来源：

SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷

关键词：

graphite; interface; reconstruction; XPS; photoelectron spectroscopy;

D O I：

10.4028/www.scientific.net/MSF.556-557.525

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Graphitization of the 6H-SiC(0001) surface as a function of annealing temperature has been studied by ARPES, high resolution XPS, and LEED. For the initial stage of graphitization 2 the 6 root 3 reconstructed surface - we observe sigma-bands characteristic of graphitic sp(2) -bonded carbon. The pi-bands are modified by the interaction with the substrate. C1s core level spectra indicate that this layer consists of two inequivalent types of carbon atoms. The next layer of graphite (graphene) formed on top of the 6 root 3 surface at T-A=1250 degrees C-1300 degrees C has an unperturbed electronic structure. Annealing at higher temperatures results in the formation of a multilayer graphite film. It is shown that the atomic arrangement of the interface between graphite and the SiC(0001) surface is practically identical to that of the 6 root 3 reconstructed layer.

引用

页码：525 / +

页数：2

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